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| FCA47N60F 600V N-Channel MOSFET, FRFET SuperFET FCA47N60F 600V N-Channel MOSFET, FRFET Features * 650V @TJ = 150C * Typ. RDS(on) = 0.062 * Fast Recovery Type ( trr = 240ns) * Ultra Low Gate Charge (typ. Qg = 210nC) * Low Effective Output Capacitance (typ. Cosseff. = 420pF) * 100% avalanche tested January 2009 TM Description SuperFETTM is, Fairchild's proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency. D G TO-3PN G DS FCA Series S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25C) - Derate above 25C (Note 2) (Note 1) (Note 1) (Note 3) Parameter - Continuous (TC = 25C) - Continuous (TC = 100C) - Pulsed (Note 1) FCA47N60F 600 47 29.7 141 30 1800 47 41.7 50 417 3.33 -55 to +150 300 Unit V A A A V mJ A mJ V/ns W W/C C C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8" from Case for 5 Seconds Thermal Characteristics Symbol RJC RCS RJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient Typ. -0.24 -- Max. 0.3 -41.7 Unit C/W C/W C/W (c)2009 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FCA47N60F Rev. A FCA47N60F 600V N-Channel MOSFET, FRFET Package Marking and Ordering Information Device Marking FCA47N60F Device FCA47N60F Package TO-3PN Reel Size - Tape Width - Quantity 30 Electrical Characteristics Symbol Off Characteristics BVDSS BVDSS / TJ BVDS IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss Coss Coss eff. td(on) tr td(off) tf Qg Qgs Qgd IS ISM VSD trr Qrr NOTES: TC = 25C unless otherwise noted Parameter Drain-Source Breakdown Voltage Conditions VGS = 0V, ID = 250A, TJ = 25C VGS = 0V, ID = 250A, TJ = 150C Min 600 -------- Typ -650 0.6 700 ----- Max Units ----10 100 100 -100 V V V/C V A A nA nA Breakdown Voltage Temperature Coefficient Drain-Source Avalanche Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse ID = 250A, Referenced to 25C VGS = 0V, ID = 47A VDS = 600V, VGS = 0V VDS = 480V, TC = 125C VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VDS = VGS, ID = 250A VGS = 10V, ID = 23.5A VDS = 40V, ID = 23.5A VDS = 25V, VGS = 0V, f = 1.0MHz (Note 4) On Characteristics Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance 3.0 ---0.062 40 5.0 0.073 -V S Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Effective Output Capacitance VDS = 480V, VGS = 0V, f = 1.0MHz VDS = 0V to 400V, VGS = 0V VDD = 300V, ID = 47A RG = 25 -----5900 3200 250 160 420 8000 4200 ---pF pF pF pF pF Switching Characteristics Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 480V, ID = 47A VGS = 10V (Note 4, 5) (Note 4, 5) -------- 185 210 520 75 210 38 110 430 450 1100 160 270 --- ns ns ns ns nC nC nC Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = 47A VGS = 0V, IS = 47A dIF/dt =100A/s (Note 4) ------ ---240 2.04 47 141 1.4 --- A A V ns C 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. IAS = 18A, VDD = 50V, RG = 25, Starting TJ = 25C 3. ISD 47A, di/dt 1,200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test: Pulse width 300s, Duty Cycle 2% 5. Essentially Independent of Operating Temperature Typical Characteristics 2 FCA47N60F Rev. A www.fairchildsemi.com FCA47N60F 600V N-Channel MOSFET, FRFET Typical Performance Characteristics Figure 1. On-Region Characteristics VGS Top : Figure 2. Transfer Characteristics 10 2 ID, Drain Current [A] ID , Drain Current [A] 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V 10 2 150C 10 1 10 1 25C -55C - Note 1. VDS = 40V 10 0 * Notes : 1. 250s Pulse Test o 2. TC = 25 C 10 0 2. 250s Pulse Test 10 -1 10 0 10 1 2 4 6 8 10 VDS, Drain-Source Voltage [V] VGS , Gate-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 0.25 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue IDR , Reverse Drain Current [A] 2 RDS(ON) [],Drain-Source On-Resistance 10 0.20 0.15 VGS = 10V 0.10 10 1 VGS = 20V 0.05 * Note : TJ = 25C 150C 25C * Notes : 1. VGS = 0V 2. 250s Pulse Test 0.00 0 20 40 60 80 100 120 140 160 180 200 10 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 ID, Drain Current [A] VSD , Source-Drain Voltage [V] Figure 5. Capacitance Characteristics 25000 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Figure 6. Gate Charge Characteristics 12 VDS = 100V VGS, Gate-Source Voltage [V] 20000 10 VDS = 250V VDS = 400V Capacitance [pF] Coss 15000 * Notes : 1. VGS = 0 V 2. f = 1 MHz 8 6 10000 Ciss 4 5000 Crss 0 -1 10 2 * Note : ID = 47A 0 10 0 10 1 0 50 100 150 200 250 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] 3 FCA47N60F Rev. A www.fairchildsemi.com FCA47N60F 600V N-Channel MOSFET, FRFET Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature 1.2 Figure 8. On-Resistance Variation vs. Temperature 3.0 BVDSS, (Normalized) Drain-Source Breakdown Voltage RDS(ON), (Normalized) Drain-Source On-Resistance 2.5 1.1 2.0 1.0 1.5 0.9 * Notes : 1. VGS = 0 V 2. ID = 250A 1.0 * Notes : 1. VGS = 10 V 2. ID = 23.5 A 0.5 0.8 -100 -50 0 50 100 150 200 0.0 -100 -50 0 50 100 150 200 TJ, Junction Temperature [C] TJ, Junction Temperature [C] Figure 9. Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature 50 Operation in This Area is Limited by R DS(on) 10 2 40 ID, Drain Current [A] 1 ms 10 1 ID, Drain Current [A] 3 100 s 30 10 ms DC 20 10 0 * Notes : 1. TC = 25C 2. TJ = 150C 3. Single Pulse 10 10 -1 10 0 10 1 10 2 10 0 25 50 75 100 125 150 VDS, Drain-Source Voltage [V] TC, Case Temperature [C] Figure 10. Transient Thermal Response Curve ZJC(t), Thermal Response D = 0 .5 10 -1 0 .2 0 .1 0 .0 5 0 .0 2 10 -2 * N o te s : 1 . Z J C ( t) = 0 .3 C /W M a x . 2 . D u ty F a c to r , D = t 1 /t 2 3 . T J M - T C = P D M * Z J C ( t) PDM t1 t2 s in g le p u ls e 0 .0 1 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a tio n [s e c ] 4 FCA47N60F Rev. A www.fairchildsemi.com FCA47N60F 600V N-Channel MOSFET, FRFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 5 FCA47N60F Rev. A www.fairchildsemi.com FCA47N60F 600V N-Channel MOSFET, FRFET Peak Diode Recovery dv/dt Test Circuit & Waveforms 6 FCA47N60F Rev. A www.fairchildsemi.com FCA47N60F 600V N-Channel MOSFET, FRFET Mechanical Dimensions TO-3PN Dimensions in Millimeters 7 FCA47N60F Rev. A www.fairchildsemi.com FCA47N60F 600V N-Channel MOSFET, FRFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. Build it NowTM CorePLUSTM CorePOWERTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R) EfficentMaxTM EZSWITCHTM * TM (R) Fairchild(R) Fairchild Semiconductor(R) FACT Quiet SeriesTM FACT(R) FAST(R) FastvCoreTM FlashWriter(R) * FPSTM F-PFSTM FRFET(R) Global Power ResourceSM Green FPSTM Green FPSTM e-SeriesTM GTOTM IntelliMAXTM ISOPLANARTM MegaBuckTM MICROCOUPLERTM MicroFETTM MicroPakTM MillerDriveTM MotionMaxTM Motion-SPMTM OPTOLOGIC(R) OPTOPLANAR(R) (R) Programmable Active DroopTM QFET(R) QSTM Quiet SeriesTM RapidConfigureTM TM PDP SPMTM Power-SPMTM PowerTrench(R) PowerXSTM Saving our world, 1mW /W /kW at a timeTM SmartMaxTM SMART STARTTM SPM(R) STEALTHTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SupreMOSTM SyncFETTM (R) The Power Franchise(R) TinyBoostTM TinyBuckTM TinyLogic(R) TINYOPTOTM TinyPowerTM TinyPWMTM TinyWireTM SerDesTM UHC(R) Ultra FRFETTM UniFETTM VCXTM VisualMaxTM XSTM * EZSWITCHTM and FlashWriter(R) are trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Farichild's Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Farichild strongly encourages customers to purchase Farichild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handing and storage and provide access to Farichild's full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Farichild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative / In Design Definition Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I37 Preliminary First Production No Identification Needed Obsolete Full Production Not In Production 8 FCA47N60F Rev. A www.fairchildsemi.com |
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